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THE ON-STATE IN THRESHOLD SWITCHESPRYOR RW.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 425-426; BIBL. 8 REF.Serial Issue

AMORPHOUS SEMICONDUCTOR THRESHOLD ON-STATE PROPERTIES AS FUNCTIONS OF DECAY TIME, AMBIENT TEMPERATURE, AND POLARITY.VEZZOLI GC; DOREMUS LW; TIRELIS GG et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 5; PP. 234-237; BIBL. 13 REF.Article

CALCULATION OF THE TURN-ON BEHAVIOR OF MOST.ZAHN ME.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 843-854; ABS. ALLEM.; BIBL. 13 REF.Article

THE ON-STATE IN CHALCOGENIDE THRESHOLD SWITCHESLEE SH.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 11; PP. 544-546; BIBL. 10 REF.Serial Issue

THEORIE DE LA PROPAGATION DE L'ETAT CONDUCTEUR DANS LE THYRISTORLEVINSHTEJN ME; SIMIN GS.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 11; PP. 2160-2167; BIBL. 14 REF.Article

MECANISME DE MAINTIEN DE L'ETAT ENCLENCHE DANS LES COMMUTATEURS A SEUILGURIN NT; SEMAK DG.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1977; VOL. 20; NO 5; PP. 80-85; BIBL. 26 REF.Article

THE ON-STATE OF SINGLE-CRYSTAL AND POLYCRYSTALLINE NBO2VEZZOLI GC; DOREMUS LW; LEVY S et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 833-839; BIBL. 9 REF.Article

A MODEL FOR THE ON STATE OF AMORPHOUS CHALCOGENIDE THRESHOLD SWITCHESPETERSEN KE; ADLER D.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 925-933; BIBL. 19 REF.Article

A NEW FORM OF TWO-STATE SWITCHING DEVICE, USING A BULK SEMICONDUCTOR BARRIERBOARD K; DARWISH M.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 7; PP. 571-575; BIBL. 9 REF.Article

ETUDE DE LA CHUTE DE TENSION "DIRECT-PASSANT" DANS LES THYRISTORS.ENEA G.1978; ONDE ELECTR.; FR.; DA. 1978; VOL. 58; NO 3; PP. 222-228; ABS. ANGL.; BIBL. 8 REF.Article

THE ON-STATE OF THE AMORPHOUS SEMICONDUCTOR DEVICE.BUCKLEY WD.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 11; PP. 743-746; BIBL. 4 REF.Article

NOVEL SEMICONDUCTOR SWITCH WITH CONTROLLABLE DELAY AND RAPID TURN-ON.WHELAN MV; DAVERVELD LA.1975; PHILIPS RES. REP.; NETHERL.; DA. 1975; VOL. 30; NO 4; PP. 256-261; BIBL. 3 REF.Article

DEVELOPMENTS IN THE DESIGN OF THYRISTORSWATSON W.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 615; PP. 41-44 (3P.)Article

NUMERICAL INVESTIGATION OF TURN-ON CONDITIONS IN TRAPATT OSCILLATORS.BOGAN Z; FREY J.1976; I.E.E.E. TRANS. ELECTRON DEVICE; U.S.A.; DA. 1976; VOL. 24; NO 2; PP. 128-135; BIBL. 10 REF.Article

ON-STATE CHARACTERISTICS OF AMORPHOUS/CRYSTALLINE HETEROJUNCTIONS.PETERSEN KE; ADLER D.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 211-213; BIBL. 11 REF.Article

TRANSFER OF ON STATES BETWEEN CLOSELY SPACED NEGATIVE-RESISTANCE P+-I-N+DIODESSUPADECH S; VACHRAPIBOOL P; AKIBA Y et al.1979; I.E.E.J. SOLID STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 1; PP. 21-24; BIBL. 5 REF.Article

RADIATIVE EMISSION DURING THE THRESHOLD ON-STATE OF A CHALCOGENIDE AMORPHOUS SEMICONDUCTOR.VEZZOLI GC.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 6; PP. 3614-3615; BIBL. 9 REF.Article

CHARACTERIZATION OF LIGHT EMISSION FROM AMORPHOUS CHALCOGENIDE SWITCHESWALSH PJ; POOLADDEJ D; THOMPSON MJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 11; PP. 733-734; BIBL. 8 REF.Article

ETUDE DE L'ETAT CONDUCTEUR STATIONNAIRE D'UN ELEMENT COMMUTATEUR A GRILLE. IIBAKSHT FG; KAPLAN VB; KOSTIN AA et al.1978; ZH. TEKH. FIZ.; SUN; DA. 1978; VOL. 48; NO 11; PP. 2285-2294; BIBL. 5 REF.Article

ETUDE PHYSIQUE DE LA SENSIBILITE, DE LA CONDUCTION A L'ETAT PASSANT ET DE LA COMMUTATION DES THYRISTORS. APPLICATION A LA CONCEPTION DE CES DISPOSITIFS.LETURCQ P; MUNOZ YAGUE A.1976; DGRST-7470923; FR.; DA. 1976; PP. 1-180; ABS. ANGL.; BIBL. DISSEM.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

ETUDE DE L'ETAT CONDUCTEUR STATIONNAIRE D'UN ELEMENT COMMUTATEUR A GRILLE. IBAKSHT FG; KAPLAN VB; KOSTIN AA et al.1978; ZH. TEKH. FIZ.; SUN; DA. 1978; VOL. 48; NO 11; PP. 2273-2284; BIBL. 21 REF.Article

Temperature dependence of the on state regeneration in metal/insulator/metal diodesBACH, T; BLESSING, R; PAGNIA, H et al.Thin solid films. 1983, Vol 103, Num 3, pp 283-293, issn 0040-6090Article

A proposed method for determining a MOSFET gate electrode's bottom dimension and the on-state fringing capacitanceSHIUH-WUU LEE.IEEE transactions on computer-aided design of integrated circuits and systems. 1993, Vol 12, Num 1, pp 96-101, issn 0278-0070Article

A high-performance self-aligned UMOSFET with a vertical trench contact structureMATSUMOTO, S; OHNO, T; ISHII, H et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 5, pp 814-818, issn 0018-9383Article

Polyaniline is a random-dimer model : a new transport mechanism for conducting polymersWU, H.-L; PHILLIPS, P.Physical review letters. 1991, Vol 66, Num 10, pp 1366-1369, issn 0031-9007Article

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